HCD-L 300
(linear)
 HCD-P 100
(planar type)
SLAN Series (available
in 4, 16 and 67 cm diameters)
ICP-P 200
|
| Hollow Cathode 13.56 MHz RF Plasma Sources |
| Operation over an extended
power and pressure range |
| High plasma and
radical species densities with excellent homogenity (1011
cm-3) |
| Compatible with chemical
reactive and non-reactive gases |
| Cw and pulsed power
operation |
| Low contamination |
| Linear type also
available in 600 mm and 900 mm |
| Applications:
|
| Plasma enhanced chemical
vapor deposition (PECVD) |
| Plasma polymerization,
plasma cleaning, plasma etching
|
| Surface modification |
|
|
|
| SLAN (SLot
ANtenna) 2.45 GHz Microwave Plasma Sources |
|
High plasma densities |
| Pressure range
from 10-5 mbar up to atmospheric pressure
|
|
Compatible with chemically reactive and non-reactive gases |
|
Low contamination |
|
ECR
and non-ECR operation |
|
Cw and pulsed operation |
|
Available in 4, 16 and 67
cm diameters |
|
Applications:
|
| Plasma enhanced chemical
vapor deposition (PECVD) |
| Plasma polymerization,
plasma cleaning, plasma etching |
| Surface modification |
|
Material science |
|
|
| Inductively Coupled Plasma Source ICP-P 200
(13.56 MHz) |
| Planar coil with
200 mm diameter |
| Extended power
range (3-1200 W) |
| Low ion energy
with narrow energy spread |
| High
plasma and radical densities |
| Low contamination |
| Cw and pulsed
operation |
|
Applications:
|
| Plasma enhanced chemical
vapor deposition (PECVD) |
| Plasma polymerization,
plasma cleaning, plasma etching |
| Surface modification |
|
MaterialS science |
|
|
