The NLD-4000 is a stand alone PC controlled ALD system which is fully automated and safety-interlocked having capabilities to deposit oxides and nitrides (e.g. AlN, GaN, TaN, TiN, Al2O3, ZrO2, LaO2, HfO2) for Semiconductor, Photovoltaic and MEMS applications. It has a 13" aluminum reaction chamber with heated walls and a pneumatically lifted top for easy chamber access. The system features an onboard glovebox which can accomodate an array of up to seven heated or cooled 50cc cylinders for precursors and reactants incorporating fast-pulse delivery valves for pulsed gas input. Unreacted precursors can be captured with a heated filter on the chamber exhaust port. Recipes, temperature setpoints, gas flows, pump-down and vent cycles, and the flushing of delivery lines are all controlled automatically via LabVIEW software. Options include automatic load/unload (without changing system footprint), Planar ICP source with remote plasma for Plasma Enhanced ALD (Planar ICP geometry maintains a small reaction chamber volume for faster cycle times), and turbo-molecular pump for lower base pressures.